Infineon

Transistor IGBT module rated at 1200V, 150 A, dual chassis mount 30X106.4X61.4 MM.

Igbt module, 1200v, 150a dual.

Insulated gate bipolar transistor, 25A and rated at 1200V.

Insulated gate bipolar transistor, 35 A rated at 1200 V.

IGBT module, 625A, 1200V.

Power module, 50AMP rated at 1200V.

IBGT module, 2.2V, 50A, 360W.

Semiconductor module, 1800V, 2590A.

Rectifier, 1800V, 1050A.

Power module dual diode, rated at 89A, 1400V.

Powerblock rated 1200V, 240A.

Rectifier diode discrete semiconductor modules.

Diode module, 215A, 1600V.

Discrete semiconductor module, 1600V, 410A.

Diode module, single rectifier, 2200V, 1100A.

IGBT module.

IGBT-Module, 1200V, 1200A.

Dual PrimePACK3 IGBT module rated 1200 V, 1400 A, with Trench and Fieldstop IGBT4.

Power supply module.

IGBT Module, 600V AC, 150A, 1ms.

IGBT module transistor polarity with 25 A, 1.2 KV, 205 W, 18 PINS.

IGBT modules n-ch 600v 37a.

IGBT module, 1200V, 450A.

IGBT module, 605A.

IGBT Transistor, 1200VDC and 1200Amps.

IGBT module.

IGBT Module, rated at 1600V DC, 800AMP.

Audio tone processor.

Thyristor diode, 60mm case, rated at 1800V.

50 mm power block thyristor, 1600V.